pnp transistor
英
美
网络 型晶体管; pnp晶体管
双语例句
- Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论NPN型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。 - The effective conversion transconductance of transistor converters using a PNP transistor operated at different oscillatory conditions and at various signal frequencies are studied.
研究晶体管变频器在各种振荡状况下及不同讯号频率时对有效变频跨导的影响。 - The results show that the effect of the parasitic PNP, transistor;. is so serious under the condition of thin epitaxy that it can not be neglected even if the technology of doping gold is used.
结果指出，在薄外延条件下，寄生PNP效应严重，即使采用掺金工艺，寄生PNP效应也不能忽略不计。 - An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.
对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。 - The effect of the parasitic PNP transistor of thin-epitaxy integrated circuit
薄外延集成电路的寄生PNP效应 - A vertical PNP transistor with P-buried collector is used as injector which is merged with the downward operating NPN transistor.
该结构采用P埋集电极纵向PNP晶体管作注入器，巧妙地实现了与正常向下工作的NPN晶体管并合。 - Through numeral simulation, the inner electric field, carrier distribution and output property of a new type PNP transistor are obtained.
从基本半导体方程出发，用数值模拟方法得到了一种新型晶体管内部的电场分布，载流子浓度分布和输出特性。 - The effects of phosphorus content on magnification of PNP transistor in PSG film by LPCVD have been investigated.
本文研究了以低压化学气相淀积方法生长PSG表面钝化膜中磷的含量对横向PNP管放大倍数的影响。 - This device consists of a n-channel depletion mode MOS transistor, a lateral pnp bipolar transistor and a resistor and has the behavior of "dual negative resistance" characteristics and easily controlled resistance in positive resistance region.
该器件由一n沟耗尽型MOS管、一横向pnp双极晶体管和一个电阻集成而得。它具有双负阻特性和正阻区阻值易于控制等特点。 - The fabricating technology and design of a 20 A PNP darlington power transistor is introduced, and the tested results of the device is showed in this paper, too.
介绍了20A硅PNP达林顿晶体管的设计思路、芯片的内部结构、工艺流程和工艺参数，同时列出了制造的产品的电性能测试结果。 - We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。 - In this paper the two-dimension analysis is given for transversal PNP Transistor.
本文对横向PNP晶体管进行了二维分析。 - Lateral channel field-controlled thyristor is a combination of a NJFET and a PNP bipolar transistor.
水平沟道场控晶闸管是由结型场效应晶体管和双极型晶体管复合构成的一种晶闸管。 - A Silicon PNP Darlington Power Transistor
硅PNP型大功率达林顿晶体管 - There is a digital control circuit to modify the number of the PNP transistor arrays, as soft-trimming.
电路中使用数字控制的PNP晶体管阵列进行软修正。